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Selective Deposition of Tantalum Oxynitride Films for Advanced Mask Manufacturing

IP.com Disclosure Number: IPCOM000127546D
Publication Date: 2005-Aug-31
Document File: 2 page(s) / 152K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method that selectively deposits tantalum oxynitride (TaOXNY) films. This decreases the number of process steps in mask manufacturing by eliminating the etch step. Benefits include a solution that simplifies the manufacturing process and increases CD linearity in the patterning step.