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Method of Manufacturing High Performance FET Devices with Electroplated Metal Schottky S/D Junction

IP.com Disclosure Number: IPCOM000197730D
Publication Date: 2010-Jul-20

Publishing Venue

The IP.com Prior Art Database

Abstract

A method is provided for manufacturing high performance Field-Effect Transistor (FET) devices with an electroplated metal Schottky Source/Drain (S/D) junction.