Method and System for Fabricating Non-Volatile Floating Gate Structure with Superior Charge Retention
Publication Date: 2010-Jul-20
The IP.com Prior Art Database
A method for fabricating a single poly-silicon layer non-volatile floating gate structure with improved charge retention is disclosed. By incorporating a thick top silicon oxide spacer between the floating gate poly-silicon and the silicon nitride dielectric layer, charge retention is increased > 2000X at a use temperature of 250C.