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Method and System for Fabricating Non-Volatile Floating Gate Structure with Superior Charge Retention

IP.com Disclosure Number: IPCOM000197737D
Publication Date: 2010-Jul-20

Publishing Venue

The IP.com Prior Art Database

Abstract

A method for fabricating a single poly-silicon layer non-volatile floating gate structure with improved charge retention is disclosed. By incorporating a thick top silicon oxide spacer between the floating gate poly-silicon and the silicon nitride dielectric layer, charge retention is increased > 2000X at a use temperature of 250C.