InnovationQ and the IP.com Prior Art Database will be updated on Sunday, December 15, from 11am-2pm ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Method and System for Fabricating Non-Volatile Floating Gate Structure with Superior Charge Retention

IP.com Disclosure Number: IPCOM000197737D
Publication Date: 2010-Jul-20

Publishing Venue

The IP.com Prior Art Database


A method for fabricating a single poly-silicon layer non-volatile floating gate structure with improved charge retention is disclosed. By incorporating a thick top silicon oxide spacer between the floating gate poly-silicon and the silicon nitride dielectric layer, charge retention is increased > 2000X at a use temperature of 250C.