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Single layer transfer method for production and replication of hybrid orientation substrates Disclosure Number: IPCOM000200124D
Publication Date: 2010-Sep-29
Document File: 2 page(s) / 38K

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The Prior Art Database


Disclosed is a single layer transfer method for the production and replication of hybrid orientation substrates

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Single layer transfer method for production and replication of hybrid orientation substrates

    The strong dependence of carrier mobility on silicon orientation has led to increased interest in planar hybrid orientation substrates in which n-channel devices are formed in 100-oriented Si (the orientation in which electron mobility is higher) and p-channel devices are formed in 110-oriented Si (the orientation in which hole mobility is higher) [1]. An example of a hybrid orientation substrate and the process steps to fabricate it are illustrated in Fig. 1. Fig. 1A shows the starting substrate, a silicon-on-insulator (SiOI) wafer comprising a Si handle wafer 10 with a first surface orientation, a bonded SiOI layer 30 with a second surface orientation different from the first, and a buried oxide (box) layer 20 between them. After application of mask layer 40 (Fig. 1B), selected areas of the handle wafer 10 are exposed by etching openings 50 through overlying SiOI and box layers 30 and 20 (Fig. 1C). Openings 50 are then lined with dielectric spacers 60 (Fig. 1D) and filled with Si (70, 90) grown by selective epitaxial growth templated from the handle wafer (Fig. 1E). Masking layer 40 is then removed, followed by a

planarization step to produce the structure of Fig. 1F. While the fabrication steps for this

approach leave bonded Si region 80 as SiOI, they are complex and costly, and leave epitaxially-grown Si regions 90 as bulk.

5 0

F IG 1 C

8 0 9 0

F IG 1 E F IG 1 F

    Disclosed here is simpler and potentially less costly method for forming planar hybrid orientation substrates. The method, which may be used as illustrated in Fig. 2 to form planar hybrid orientation SiOI substrates, comprises the steps of:
forming a master hybrid orientation donor wafer having desired mix of coplanar Si 100 and 110 surface layers (Fig. 2A);
defining a cleave plane in the master donor wafer, in an upper portion of the hybri...