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Wrap around Epi for FinFET Disclosure Number: IPCOM000226320D
Publication Date: 2013-Mar-27
Document File: 1 page(s) / 39K

Publishing Venue

The Prior Art Database


Disclosed is a method to create uniform extension on a FinFet 3D structure.

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Wrap around Epi for FinFET
Forming a uniform extension is challenging on a FinFET 3D structure.

The solution is to use solid phase diffusion from doped Epitaxy (Epi). Epi grows well at Fin bottom due to limited Si surface exposure.

Figure 1: Merged Fin

Figure 2: No SiO2 under-cut at FIN bottom

Figure 3: Partially SiO2 under-cut at FIN bottom