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Three-dimensional (3D) compound semiconductor channel FET Disclosure Number: IPCOM000233588D
Publication Date: 2013-Dec-17
Document File: 4 page(s) / 2M

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dimensional (((333DDD))) compound semiconductor channel FET

compound semiconductor channel FET

FinFETs with compound semiconductor channels have already been proposed, where the channel material (usually a low band-gap semiconductor) is formed epitaxially on a large band-gap semiconductor. However, the choice of channel material and substrate usually leads to significant difference in the lattice constant of the two, which in turn prohibits formation of tall fins.

Starting with a large band-gap semiconductor substrate, we form fin-like structures on the substrate. Channel material is then epitaxially grown on the substrate . Only a few nanometer of the channel material is enough for the conduction, while high-aspect ration structure is achieved by forming tall fin -like structures in the large band-gap material. While the structure is a single gate (as opposed to double gate FinFET) it still provide area advantage over planar device .

Figure 1 shows the prior art of compound semiconductor FinFET. Due to large lattice mismatch between the fin channel material and the underlying substrate it is difficult to form tall fins .

Fig. 1

We propose a method to fabricate 3-D fin-like structures without need to form thick epitaxial layers . Starting with a large bandgap compound semiconductor substrate, we form mandrels as depicted in Figure 2.


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Fig. 2

Then we epitaxially grow the channel semiconductor material as shown in Fig . 3

The acti...