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A method and system is disclosed for determining performance degradation due to Bias Temperature Instability (BTI using one or more interleaved ring oscillators.
English (United States)
This text was extracted from a PDF file.
This is the abbreviated version, containing approximately
51% of the total text.
Page 01 of 3
A Method and System for Determining Performance Degradation due to Bias Temperature Instability using Interleaved Ring Oscillators
A primary factor of performance degradation for a semiconductor chip is Bias Temperature Instability (BTI), characterized by a decrease in transistor drive current due to an applied voltage over time.
Fig. 1 depicts performance degradation of a FinFET semiconductor device due to a kind of BTI, known as Negative Bias Temperature Instability (NBTI).
BTI can be characterized using performance monitoring vehicles such as, ring oscillators.
Disclosed is a method and system for determining performance degradation due to BTI using one or more interleaved ring oscillators (ILROs).
The system includes a semiconductor chip, wherein the semiconductor chip includes
the one or more ILROs. Further, each ILRO includes a pair of identical ring oscillators interleaved with one another in such a manner so as to occupy a common physical space. Fig. 2 illustrates a schematic of an ILRO of the one or more ILROs.
Page 02 of 3
The method includes measuring performance characterized by frequency/leakage, for both of the identical ring oscillators at a starting time T0. For illustrative purposes, the identical ring oscillators are called, ring oscillator A and ring oscillator B. The difference in frequency/leakage, denoted as ∆AB for the identical ring oscillators is indicative of an effect of random Across Chip Variation (random ACV) upon BTI. In an embodiment, one or more differences in frequency/leakage for both the identical ring oscillators are measured for each of the one or more ILRO's. The effect of random ACV is characterized by the standard deviation...