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Method and System for Providing an Independent Multi Gate Controlled FinFET Transistor

IP.com Disclosure Number: IPCOM000236470D
Publication Date: 2014-Apr-29

Publishing Venue

The IP.com Prior Art Database

Abstract

A method and system is disclosed for providing an independent multi gate controlled Fin Field-Effect Transistor (FinFET) transistor. The method and system includes three independent gates controlled FinFET Device fabricated by standard FinFET Replacement Metal Gate (RMG) process.