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Conditioning Abrasive Particle for Sapphire Fine Lapping with a Diamond Agglomerate Fixed Abrasive Pad

IP.com Disclosure Number: IPCOM000237385D
Publication Date: 2014-Jun-16

Publishing Venue

The IP.com Prior Art Database

Abstract

A fixed abrasive lapping pad, having diamond agglomerate as the abrasive particle was used to lap C-plane sapphire wafers. A coolant was used that contained silicon carbide (SiC) particles or alumina particles as conditioning particles to condition or dress the fixed abrasive during the lapping process. Sapphire wafers lapped with coolants containing SiC conditioning particles have higher removal rates than wafers lapped with a coolant having alumina conditioning particles. At comparable SiC and alumina particle sizes, 3-4 micron, sapphire wafers lapped with coolants containing SiC conditioning particles resulted in a somewhat higher Ra than that exhibited by sapphire wafers lapped with coolants containing alumina conditioning particles.