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Method of Preparing Doped Polyacene

IP.com Disclosure Number: IPCOM000237822D
Publication Date: 2014-Jul-15
Document File: 2 page(s) / 41K

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The IP.com Prior Art Database


A method of preparing doped polyacene is disclosed. The doped polyacene is prepared by treating polyacene using a new p-type dopant. The new p-type dopant is a one-electron oxidant such as, but not limited to, triethyloxonium hexachloroantimonate.

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Method of Preparing Doped Polyacene

Pentacene, which is an example of polyacenes, is used as an organic semiconductor in various electronic devices such as, but not limited to, Field-Effect Transistor (FET), thermoelectric material and in photo-voltaics. In most of applications of polyacenes, there is a requirement of doping polyacenes. The doping of polyacenes increases charge carriers or reduces contact resistance with metals. P-type doping of polyacenes is carried out using halogens such as iodine or bromine. Although halogens efficiently dope polyacenes, the doped material is not environmentally stable and dopants desorb over time.

Disclosed is a method of preparing doped polyacenes . Polyacenes is treated with one-electron oxidants such as, but not limited to, triethyloxonium hexachloroantimonate to form doped polyacenes. For example, pentacene is treated with triethyloxonium hexachloroantimonate to form highly doped pentacene . The doped form is soluble in various organic solvents such as, but not limited to, chloroform, dichloromethane and dichloroethane. The doped form can be deposited from a solution . Alternatively, the doping can be achieved by depositing a thin film of pentacene and exposing the thin film to a solution of the dopant in a solvent that does not dissolve the doped pentacene . The solvent can be one or more of, but not limited to, hexane, diethyl ether and benzene. The thin film of pentacene is deposited either by evaporation in vacuum o...