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Method and System for Improving Trap Rich Characteristics of RFSOI substrates with Multiple Layers of Polysilicon under the Buried Oxide Disclosure Number: IPCOM000239172D
Publication Date: 2014-Oct-19

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The Prior Art Database


A method and system is disclosed for improving trap rich characteristics of Radio Frequency Silicon on Insulator (RFSOI) substrates with multiple layers of polysilicon under the buried oxide.