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Method and System for Improving Trap Rich Characteristics of RFSOI substrates with Multiple Layers of Polysilicon under the Buried Oxide

IP.com Disclosure Number: IPCOM000239172D
Publication Date: 2014-Oct-19

Publishing Venue

The IP.com Prior Art Database

Abstract

A method and system is disclosed for improving trap rich characteristics of Radio Frequency Silicon on Insulator (RFSOI) substrates with multiple layers of polysilicon under the buried oxide.