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Method for Compact Modeling of Stress Effects

IP.com Disclosure Number: IPCOM000239622D
Publication Date: 2014-Nov-19
Document File: 4 page(s) / 177K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for incorporating the influence of stress on semiconductor mobility in a compact model using an efficient algorithm to generate local mobility at each point in the device. This local mobility is then averaged to find the net effective mobility in the device.