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Method for selective deposition to eliminate nitride loss during high selectivity cyclic oxide etching

IP.com Disclosure Number: IPCOM000248137D
Publication Date: 2016-Oct-31
Document File: 1 page(s) / 34K

Publishing Venue

The IP.com Prior Art Database

Abstract

A method is disclosed for eliminating nitride loss during high selectivity cyclic oxide etching (SAC etching) by depositing sacrificial polymer layer selectively.