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Vertically stacked bi-layer spacer

IP.com Disclosure Number: IPCOM000255037D
Publication Date: 2018-Aug-27

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method to form a vertically stacked bi-layer spacer structure. The novel structure makes the vertically stacked bilayer spacer such that the lower part of the spacer remains, per the POR, and the low k spacer and top part of the spacer is Silicon Nitride (SiN).