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Method to Improve BEOL Shorts and TDDB

IP.com Disclosure Number: IPCOM000255375D
Publication Date: 2018-Sep-20

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed are a structure and method to create more dielectric spacing post-damascene/dual damascene dielectric reactive ion etch (RIE) and pre-metallization by depositing a low k layer. The low k layer is patterned to leave more dielectric on the upper sidewalls of the trenches.