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Disclosed are a structure and method to mitigate silicon on insulator (SOI) implant-related channel damage by integrating Well and Vt implantation before channel formation.
English (United States)
This text was extracted from a PDF file.
100% of the total text.
FDSOI - Pre Channel Implantation to Mitigate SOI Implant Damage
Disclosed are a structure and method to mitigate silicon on insulator (SOI) implant-
related channel damage by integrating Well and Vt implantation before channel
Vt implants into the silicon on insulator (SOI) positive Field Effect Transistor (PFET)
SiGe channel degrade Idoff and Ieff due to channel scattering and implant induced
The proposed solution is to mitigate SOI implant-related channel damage by integrating
Well and Vt implantation before channel formation.
The proposed structure is to move the post shallow trench isolation (STI) well implant
and Vt implants prior to cSiGe channel formation.
The proposed method is to move the Well and Vt implants after channel thinning but
before cSiGe. The method must process the cSiGe formation with un-condensed
channel due to thermal budget constraints. The method must limit the STI thermal
budget to 800C to minimize/prevent lateral dopant diffusion.
The Composition of Matter follows: 100% of the PFET & NFET Well and Vt implants are
moved before cSiGe; or only PFET Well and Vt implants are moved before cSiGe.
Figure 1: Method flow
Figure 2: Method flow, cont’d.
Advantages over Previous Solutions
Integrating Well and Vt implantation before channel formation mitigates SOI implant
related channel damage.