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A Method to Form VTFET Bottom Spacer

IP.com Disclosure Number: IPCOM000258777D
Publication Date: 2019-Jun-12
Document File: 4 page(s) / 69K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method to form a Vertical Tunnel Field Effect Transistor (VTFET) bottom spacer by depositing a sacrificial protection spacer formation.