Month of October 2004 - Page Number 4

Showing 31 - 40 of 324 from October 2004
Browse Prior Art Database
  1. 31.
    Disclosed is a method for solder joint microstructure manipulation to increase reliability through particulate additions to solder alloy paste. Benefits include improved functionality, improved performance, and improved reliability.
    IPCOM000032217D | 2004-Oct-26
  2. 32.
    Disclosed is a method for a BGA package with improved coplanarity. Benefits include improved yield and improved throughput.
    IPCOM000032216D | 2004-Oct-26
  3. 33.
    Disclosed is a method for a high performance, thin film thermoelectric cooler (TFTEC) with minimal contact resistances (Rc). Benefits include improved functionality and improved performance.
    IPCOM000032215D | 2004-Oct-26
  4. 34.
    Disclosed is a method for laser trimming of etch-resistive material for localized fine-feature patterning. Benefits include improved functionality and improved yield.
    IPCOM000032214D | 2004-Oct-26
  5. 35.
    Disclosed is a method for a copper micro-channel or pin grid cooler, which is created by electroforming a copper structure onto a copper disk. Benefits include a solution that is compatible with high-volume manufacturing.
    IPCOM000032213D | 2004-Oct-26
  6. 36.
    Disclosed is a method that uses a built-in ATE power supply to relay current measurements from a standalone circuit or external power supply back to the tester. This extends the current measurement capabilities of an existing ATE device under test (DUT), while maintaining compatibility with existing test application...
    IPCOM000032212D | 2004-Oct-26
  7. 37.
    Disclosed is a method for photonically induced bottom up chemical vapor deposition (CVD) fill. Benefits include improved functionality, improved performance, and improved design flexibility.
    IPCOM000032211D | 2004-Oct-26
  8. 38.
    Disclosed is a method that uses a multi-pedestal chamber to improve the wafer-to-wafer mean film thickness. The disclosed method accomplishes this by scaling a deposition parameter (i.e. pressure, RF power, gas flow, dep time, etc.) as a function of the number of wafers present in the process chamber. Benefits...
    IPCOM000032210D | 2004-Oct-26
  9. 39.
    Disclosed is a method that uses SiO2 nano-particles (i.e. silica) in the spin-on dielectric (SOD) for STI applications. Benefits include reducing anneal temperatures.
    IPCOM000032209D | 2004-Oct-26
  10. 40.
    Disclosed is a method that applies radiation treatments (e.g. E-beam, UV, or Plasma) in association with thermal curing methods to convert the spin-on dielectric (SOD) to high quality SiO2 for STI applications. Benefits include reducing annealing temperatures.
    IPCOM000032208D | 2004-Oct-26