Month of March 2013 - Page Number 4

Showing 31 - 40 of 444 from March 2013
Browse Prior Art Database
  1. 31.
    A solution is provided that expands the Mediatrace functionality by changing the behavior of the responding hub. The Mediatrace responder intercepts the fact of the arrival of the requestor's packet. It then inserts the arrival timestamp into a Mediatrace response packet (IMAP response payload and Medianet wire...
    IPCOM000226338D | 2013-Mar-27
  2. 32.
    IPCOM000226337D | 2013-Mar-27
  3. 33.
    A chip bin discharge apparatus including an aperture outlet device having multiple positionable arms capable of manipulating the size of an aperture formed therebetween at a bottom discharge opening.
    IPCOM000226336D | 2013-Mar-27
  4. 34.
    IPCOM000226335D | 2013-Mar-27
  5. 35.
    The present invention provides a method for sanitizing animal carcasses with a haloperoxidase and hydrogen peroxide
    IPCOM000226334D | 2013-Mar-27
  6. 36.
    Presented herein are techniques in which, within a social network in which a group of users have access to the same activity or content, a user from the group may attach a reminder to that activity and the group of users will receive that reminder into their activity feed or any external application. The shared...
    IPCOM000226333D | 2013-Mar-27
  7. 37.
    Disclosed is a novel dual gate dielectric integration for Replacement Metal Gate (RMG) FinField Effect Transistors (FETs).
    IPCOM000226332D | 2013-Mar-27
  8. 38.
    A method and system for enhancing precision of compact Field-Effect Transistor (FET) models for assessing speed and leakage performance by using a Compact Model Enhancement Model (CMEM) is disclosed. The CMEM model aligns a base model with a reference model in order to enhance the precision of the compact FET models.
    IPCOM000226331D | 2013-Mar-27
  9. 39.
    Disclosed are a method and structure for gate last Metal Oxide Semiconductor (MOS) transistor with self-aligned source/drain contacts.
    IPCOM000226330D | 2013-Mar-27
  10. 40.
    Disclosed is a method to form precisely controlled TS silicide by selective metal dep.
    IPCOM000226329D | 2013-Mar-27