Month of March 2014 - Page Number 16

Showing 151 - 160 of 476 from March 2014
Browse Prior Art Database
  1. 151.
    A disposable sensor network linked with mobile devices and backend systems used to gather and process data to make field operations more efficient and safe, and to produce more reliably correct outcomes. Data is interpreted in the context of business processes, both locally in the field and remotely in the cloud.
    IPCOM000235806D | 2014-Mar-25
  2. 152.
    A method and system for dynamically managing Virtual Local Area Networks (VLAN) membership in virtualization environment is disclosed.
    IPCOM000235805D | 2014-Mar-25
  3. 153.
    A method and system for likewise comment/response is disclosed.
    IPCOM000235804D | 2014-Mar-25
  4. 154.
    A method for dynamic notification of an issue and a solution is disclosed.
    IPCOM000235803D | 2014-Mar-25
  5. 155.
    A system and method for cloud service transformation and portability is disclosed.
    IPCOM000235802D | 2014-Mar-25
  6. 156.
    A method of using a gated-diode structure to monitor for process induced charging damage is set forth. Historically, a FET or FET-like structure is used to monitor for process induced charging damage by measuring gate dielectric reliability, such as time dependent dielectric breakdown.
    IPCOM000235801D | 2014-Mar-25
  7. 157.
    A method of using a gated-diode structure to monitor physical damage from Reactive Ion Etching (RIE) on semiconductor wafer surfaces is set forth.
    IPCOM000235800D | 2014-Mar-25
  8. 158.
    A method and system for reducing defects in merging one or more epitaxial fins in a source or a drain area is disclosed. The reduced defects may be achieved by growing Dichlorosilane (DCS) epitaxial silicon layer on the one or more epitaxial fins.
    IPCOM000235799D | 2014-Mar-25
  9. 159.
    A method and system is disclosed for performing integrity check on experimental data of an Optical Proximity Correction (OPC) model. The method and system performs the integrity check by performing statistical analysis, aerial image simulation and image inspection of the experimental data.
    IPCOM000235798D | 2014-Mar-25
  10. 160.
    Disclosed is a method to form a wide planar Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) with uniaxial strain. The approach forms narrow Si:C stripes in the active region. The space between these stripes is filled with relaxed Si. Since there is very small difference in the conduction band of Si:C...
    IPCOM000235797D | 2014-Mar-25