Month of March 2014 - Page Number 17

Showing 161 - 170 of 476 from March 2014
Browse Prior Art Database
  1. 161.
    Disclosed is a method and structure to introduce electrical isolation structures in the voids inside self-aligned contact (SAC) cap in order to prevent the formation of an electrical short channel between CA (i.e. source, drain contacts) and CB.
    IPCOM000235796D | 2014-Mar-25
  2. 162.
    Disclosed is a novel Fin field effect transistor (Finfet) merge process with non-selective Chemical Vapor Deposition (CVD) technique that uses a non-selective a-Si dep/etch.
    IPCOM000235795D | 2014-Mar-25
  3. 163.
    Disclosed is a method for the insertion of secondary printed features on a wafer in order to improve the optical environment around a primary printed structure.
    IPCOM000235794D | 2014-Mar-25
  4. 164.
    A method and system is disclosed for fabricating a partial and a full replacement spacer for Replacement Metal Gate (RMG) devices. The method includes steps of fabricating the partial and the full replacement spacer for a semiconductor wafer.
    IPCOM000235793D | 2014-Mar-25
  5. 165.
    Disclosed is a method to use a multi-layer Permanent Hard Masks (PHM) to improve reliability. A thin layer of Tetraethyl Orthosilicate (TEOS) is used on top of a thin layer of NBLoK as a PHM.
    IPCOM000235792D | 2014-Mar-25
  6. 166.
    Disclosed is a method to form a resistor structure with superior thermal conductivity and a much higher density circuit. The invention provides a technology to form a resistor under buried oxide.
    IPCOM000235791D | 2014-Mar-25
  7. 167.
    Disclosed is a method to eliminate the variability of SiN HM thickness incoming to Reactive Ion Etching (RIE) between, as well as across, wafers.
    IPCOM000235790D | 2014-Mar-25
  8. 168.
    A method and system is disclosed for anticipating circuit designs at early technology development cycle. The method and system provides new corner models to predict circuit designs and their design variations corresponding to the technologies at their early stages of development.
    IPCOM000235789D | 2014-Mar-25
  9. 169.
    A method for improving query results by minimizing ambiguity in search terms is disclosed.
    IPCOM000235788D | 2014-Mar-25
  10. 170.
    A method and system is disclosed for measuring MOL parasitic capacitance (Cmol) accurately to account for parasitic capacitance from device overlap capacitance. The method and system proposes improved structures for MOL parasitic capacitance by minimizing Tinv impact due to EG IL and also minimizing...
    IPCOM000235787D | 2014-Mar-25