Month of April 2014 - Page Number 13

Showing 121 - 130 of 505 from April 2014
Browse Prior Art Database
  1. 121.
    A method and system is disclosed for providing multiple VIA size kelvin structures for simultaneous electrical and physical characterization.
    IPCOM000236385D | 2014-Apr-23
  2. 122.
    Disclosed is a scheme that allows three (or more) color memorizations into a Titanium Nitride/Low-Temperature Silicon Oxide (TiN/LTO) bilayer mask prior to the source/drain contact etch. This eliminates multiple occurrences of plasma exposure to the source/drain region and reduces the instances of damage from...
    IPCOM000236384D | 2014-Apr-23
  3. 123.
    Disclosed is a method to incorporate the design of a grounding contact in the measurement structures, to provide an integrated grounding path for surface charges during inline X-Ray Photoelectron Spectroscopy (XPS) measurement.
    IPCOM000236383D | 2014-Apr-23
  4. 124.
    Disclosed is a method to use a short channel mask to minimize deposition technique variations.
    IPCOM000236382D | 2014-Apr-23
  5. 125.
    Disclosed is an alternative method for X-ray Photoelectron Spectroscopy (XPS) fleet matching in which a tool is matched to target using the un-adjusted Si signal as a reference. Because this is not tool-to-tool dependent, auto-re-calibration with Host based control is easily implemented to the fleet.
    IPCOM000236381D | 2014-Apr-23
  6. 126.
    Disclosed is a method of reducing Deep Trench (DT) stress by optimizing moat structure. The simple long moat structure cannot withstand vertical distortion by DT. The method adds a vertical structure, or dividing moat structure, to mitigate the distortion by DT and improve product performance.
    IPCOM000236380D | 2014-Apr-23
  7. 127.
    Disclosed is a head attachment that has a dimple at a center of the head attachment.
    IPCOM000236379D | 2014-Apr-23
  8. 128.
    A method and system is disclosed for screening of semiconductor chips using thermal photon detection.
    IPCOM000236378D | 2014-Apr-23
  9. 129.
    Disclosed are integrated methods to improve a semiconductor fin’s profile and surface smoothness following sidewall image transfer (SIT). The approach is to perform an implantation almost parallel to the fin surface, followed by a selective etch or an oxidation in conjunction with oxide etch.
    IPCOM000236377D | 2014-Apr-23
  10. 130.
    A method and system is disclosed for detecting enumeration and bullet lists in structured and unstructured texts.
    IPCOM000236376D | 2014-Apr-23