-
51.IPCOM000255478D | 2018-Sep-27
-
52.IPCOM000255477D | 2018-Sep-27
-
53.IPCOM000255476D | 2018-Sep-27
-
54.IPCOM000255475D | 2018-Sep-27
-
55.IPCOM000255474D | 2018-Sep-27
-
56.IPCOM000255473D | 2018-Sep-27
-
57.IPCOM000255472D | 2018-Sep-27
-
58.IPCOM000255471D | 2018-Sep-27
-
59.IPCOM000255470D | 2018-Sep-27
-
60.Disclosed is a new advanced technology nodes scheme that introduces a slow anneal step at post-polysilicon (PC) dummy gate formation to eliminate voids and seams in the dummy gate fill and avoid issues in devices and yields. The anneal is a furnace anneal post dummy gate formation. The core novel idea is to deposit...IPCOM000255469D | 2018-Sep-27